Abstract
Schottky barrier diode based on composite of In2O3 and Al2O3 was fabricated using sol–gel spin coating method. The electrical properties of the diode were studied using current–voltage, capacitance–voltage and resistance–voltage characteristics. The non-linear I–V characteristics suggest the formation of Schottky barrier diode. The I–V characteristics of the diode were analyzed using the thermionic emission model. The electrical properties of the diode were investigated in the temperature range of 303–243 K. It was observed that the barrier height of the diode increases with increase in temperature. The capacitance of the diode was measured at various frequencies and temperatures. It was seen that the capacitance of the diode is decreased with increase in frequency. On the other hand, the capacitance was observed to increase with increasing temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
