Abstract
Quaternary kesterite thin films of Cu2CoSnS4 were deposited on the n-Si substrate to fabricate Cu2CoSnS4/n-Si heterojunctions. The x-ray diffraction and field emission scanning electron microscopy were employed to study the structural properties of the Cu2CoSnS4 deposited on to n-Si single crystal substrate. The capacitance–voltage measurements of the Cu2CoSnS4/n-Si heterojunction were investigated to study the junction nature which displays an abrupt junction. The dark I–V characteristics of the Cu2CoSnS4/n-Si heterojunction displays a rectification behavior. We characterized the influence of the annealing temperature on the magnitudes of the diode parameters of the Cu2CoSnS4/n-Si heterojunction. The barrier height $$ \phi_{\rm{b}} $$ of the Cu2CoSnS4/n-Si heterojunction was increased with raising the annealing temperature while the ideality factor n has a reverse performance. The illuminated J–V plot of the Cu2CoSnS4/n-Si heterojunction displays an efficiency of 6.17% for the prepared junction.
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