Abstract
Abstract A junction of emeraldine salt (ES [BF4 −]) doped by [BMIM] [BF4] may be preferred over the other junctions due to its low ideality factor and maximum rectification ratio. Schottky barrier diode based on composite of polyaniline (ES [BF4 −]) with polystyrene has been created and characterized using aluminium as Schottky contact and argent as an ohmic contact. The observed current–voltage characteristics can be satisfactorily fitted using the modified Schottky equation. Capacitance–voltage (C–V) in reverse bias and current–voltage (I–V) plots indicates a rectification. Various junction parameters were calculated from the temperature dependent I–V and C–V data and discussed. These results indicate that the composite materials have better mechanical strength and diode quality compared to the pure semiconducting polymer.
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