Abstract
Schottky barrier diode based on composite of polyaniline with polystyrene has been fabricated and characterized using aluminium as Schottky contact and platinum as an ohmic contact. The observed current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. Current-voltage (I-V) plots were non-linear and capacitance-voltage (C-V) plots were almost linear in reverse bias indicating rectification behavior. Various junction parameters were calculated from the temperature dependent I-V and C-V data and discussed. These results indicate that the composite materials have better mechanical strength and diode quality compared to the pure semiconducting polymer.
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