Abstract
The increase in temperature during the operation of an array of Si field emitters fabricated on a glass substrate was investigated. A field emitter having a very high aspect ratio was prepared by the anodization of silicon. The results show that significant Joule heating due to emission current flow takes place at the emitter tip during electron emission, resulting in changes in field emission characteristics and the melting of the apex of the silicon tip when emitters are fabricated on a glass substrate.
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