Abstract
This paper presents a new compact model, JFETIDG, for independent dual-gate JFETs. The model is applicable to JFETs with any combination of p-n junction or MOS gates, captures geometry and temperature dependencies. As a special case, it can model junctionless MOSFETs. The model is verified by comparison to experimental and TCAD data. Verilog-A code for the model is available in the public domain.
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