Abstract
Fracture of single-crystal-silicon fatigue-test specimens during fabrication was analyzed as the result of an uniform loading due to film residual stress. Five kinds of specimens showed different fracture probability from 1.4% to 26.5% depending on the crystal orientation. The ratios between the applied stress and scale parameter were analyzed based on Weibull statistics. Applied stresses were also analyzed by finite element simulation. The adjustment of crystal orientation was shown to be effective to suppress fractures of MEMS devices of single-crystal silicon.
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Schedule a callMore From: The Proceedings of Mechanical Engineering Congress, Japan
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