Abstract
We studied the field emission characteristics of DLC (Diamond-Like Carbon) coated Si tip FEAs (Field Emitter Arrays). A volcano shaped gate was fabricated in order to obtain a self-aligned structure. The Si tip was sharpened by conventional isotropic dry etching. The DLC thin film was uniformly deposited on Si tip emitters by PECVD. The gate aperture was defined by an Ar etch-back process of the photoresist planarization layer. We obtained the emission current of 10 /spl mu/A/tip and it was found that DLC coating improved the I-V characteristics of Si tip FEAs. In addition, changes of emission characteristics were investigated with respect to the thickness and physical properties of DLC deposited on Si tip emitters.
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