Abstract
I–V characteristics of AuSiO 2nSi structures with ultra thin (20–40Å) oxide layers are calculated on the basis of an idealized theoretical model. It is shown that at forward bias V < 0.9 V minority carrier current predominates. The effect of surface state charge is evaluated and theoretical I–V characteristics are given for different surface state densities. The theoretical I–V curves are compared to the measured ones of the system AuSiO 2nSi with oxide grown in rf oxygen plasma. The surface states distribution in the interval 0.2–1 eV above valence band edge in the Silicon gap is determined for structures with different oxide thicknesses obtained under different process conditions.
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