ペロブスカイト太陽電池へのITO透明電極スパッタリング直接堆積の影響

Abstract

Thin film solar cells using perovskite materials are very intensively studied since the perovskite materials such as CH3NH3PbI3 crystal have been found to show sensitizing effects on a TiO2 electron transport layer. This class of solar cell has made tremendous progress during the last few years, leading to a recently certified record power conversion efficiency (PCE) of 21.02%. In the perovskite /crystalline-Si (c-Si) tandem solar cell, furthermore, the theoretical value of PCE is expected as large as 35 %. Toward this application, the perovskite solar cell must be highly transparent at near-infrared wavelengths so that sufficient light is transmitted to the narrow-bandgap bottom cell. In this study, we fabricated the organic-lead halide perovskite solar cells comprising a transparent sputtered indium tin oxide (ITO) top electrode. We observed the PCE of 1.5% in transparent perovskite solar cells with a thin molybdenum oxide buffer layer and ITO electrode. Moreover, we obtained the PCE of 2% even in solar cells with ITO electrode sputtered directly on the organic charge transport layer. The photovoltaic property could be confirmed under the light irradiation from the ITO top electrode side.