Abstract
The effect of sputtering voltage on indium tin oxide (ITO) film properties was investigated by using a facing target sputtering system. The reduction in the sputtering voltage was found to promote (111) plane crystal orientation and improve the surface roughness of the film, although the electrical properties of the film improved slightly. Moreover, compressive film stress could not be reduced by reducing the sputtering voltages; hence, sputter deposition at a higher gas pressure—above 1.06 Pa-was necessary to realize a stress-free film. The surface roughness, however, increases remarkably at such high gas pressure; however, a small amount of Zn was added to improve the substantial surface roughness of the film caused by the high gas pressure.
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