Abstract
Ion beam sputtering deposition was firstly introduced to prepare indium tin oxide (ITO) film in this study. The microstructure of the ITO film was characterized by XRD, SEM and XPS. The Pt-ITO thin film thermocouple was fabricated on the alumina substrate using MEMS process for high temperature application. The thermoelectric output of the Pt-ITO thin film thermocouple was measured from room temperature to 1200 °C. The average seebeck coefficient was 65.39μV/°C. The thermoelectric output was very stable upon three heating and cooling cycles.
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