Abstract
Problem statement: Silicon (Si) has long been the dominant semiconductor of choice for high-power, high-temperature and high-frequency device applications. However, recently, wide bandgap semiconductors, particularly Silicon Carbide (SiC) has attracted because it offers tremendous benefits over other semiconductor materials in a large number of industrial and military. A change of technology from Si to SiC will revolutionize the power electronics and simulation is needed to predict their characteristics. Approach: The system of partial differential equations which forms the Poisson's and continuity equations together with appropriate boundary conditions cannot be solved explicitly in general. Therefore, the solution must be calculated by means of numerical approaches. Application of Finite Element Method (FEM) for semiconductor device simulation is described. It was shown that this method guarantees exact conservation of current both locally and at the device terminals. Finite element forms of Poisson's equation and the electron and hole current continuity equations were derived. Results: This study described the implementation of FEM in order to get the doping profile of the semiconductor devices. The switching simulation, 4H-SiC GTO thyristor was presented and tested numerically by predicting its performance using the 2-D simulator developed in this project. Conclusion: We calculated turn-off time and loss of SiC-GTO and compared with Si-GTO thyristor using 2-dimensional device simulation. Results showed that turn-off time and loss are smaller in SiC-GTO thyristor rather than Si-GTO thyristor.
Highlights
The Finite Element Method (FEM) (sometimes referred to as Finite Element Analysis (FEA)) is a numerical technique for finding approximate solutions of partial differential equation as well as of integral equations
This study focuses on the numerical simulation of the device compare with the common Silicon GTO Thyristor
This study presents a comparison study of 4H Silicon Carbide (SiC)-GTO thyristor and Si-GTO thyristor using numerical simulation
Summary
The FEM (sometimes referred to as Finite Element Analysis (FEA)) is a numerical technique for finding approximate solutions of partial differential equation as well as of integral equations. The solution approach is based either an approximating system of ordinary differential equations, which are solved using standard techniques such as Newton Method. It is the objective of this study to describe the application of the method to device simulation. The device which described in this study is Silicon Carbide Gate Turn-Off Thyristor (SiC-GTO Thyristor). The doping profile with the material properties of the device can be modeled.
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More From: American Journal of Engineering and Applied Sciences
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