Abstract
The system of partial differential equations which forms the Poisson’s and continuity equations together with appropriate boundary conditions cannot be solved explicitly in general. Therefore, the solution must be calculated by means of numerical approaches. Application of finite element method (FEM) for semiconductor device simulation is described. It is shown that this method guarantees exact conservation of current both locally and at the device terminals. Finite element forms of Poisson’s equation and the electron and hole current continuity equations are derived. This paper describes the implementation of FEM in order to get the doping profile of the semiconductor devices.
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