Iterative Approach for Low Actuation Voltage RF MEMS Switch

Abstract

In this paper, we have investigated high isolation and low actuation voltage offering triangular membrane-based shunt capacitive RF MEMS switch. Unlike conventional analysis, here we have extended the switch design up to the packaging stage. The triangular membrane is designed with slot and perforation. The triangular membrane is micromachined with a gold (Au) thickness of 0.5 µm, the air gap is 3 µm, and the eventually required actuation voltage is 2.4 V. The membrane resonant frequency is 57.5 kHz. Because of the incorporation of multiple triangular membranes (M1 and M2) and HfO2 as a dielectric material, the switch is offering high isolation of −80 dB. The overall switch has six pins, i.e., RFin, RFout, VB1, VB2, GND1, and GND2.