Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry

Abstract

Factors affecting the modeling of practical carbon nanotube field-effect transistors are addressed, namely: non-coaxial geometries such as the double-planar gate, and the semi-cylindrical gate; the thickness of the gate metalization; the azimuthal variation of the potential and the current. The p-i-n device is used to illustrate the importance of these factors.