Abstract

The shadowing effect of ISS was applied to observe the surface behavior of H atoms implanted with 500 eV/atom on a high-purity A1 sample. This study confirmed that this technique is powerful to observe the retention kinetics of H atoms especially on the topmost material surface with simultaneous analysis for surface contaminants such as oxygen during irradiation with hydrogen ions.The result obtained from the initially cleaned surface showed a remarkable increase in the H retention with increasing fluence of H2+ up to about 1018 H/cm2 at room temperature, depending on the fluence of predamage given by He+ ions, but showed no increase in the retention at the temperatures above 100 ° C. Therefore, because Al is a metal well known to be passive for chemisorption of H2 molecules and H atoms, it was concluded that the observed H retention originates from the traps produced by radiation damage. The activation energy for thermal desorption of the trapped H atoms was estimated to be 1.1±0.4 eV by ISS measurements.The oxygen-covered surface showed a rapid increase in the retention at fluence of less than 1017 H/cm2.

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