Abstract
Abstract The adsorption, surface diffusion, and thermal desorption of silicon on molybdenum have been investigated by field emission microscopy. The average work function of silicon covered molybdenum field emitter decreases with a simultaneous reduction in the total field emission current. This suggests the resonance tunneling of the field-emitted electrons. With low coverage, boundary free surface diffusion occurs at 565 °K on the [111] zones. Above 585 °K diffusion occurs with a sharp boundary and an activation energy of 50.9 kcal/mole in the (211) → (100) direction. Adsorption of silicon on molybdenum tips at and above room temperatures is anisotropic. The activation energy of thermal desorption from (111) and (411) planes is 63.3 and 123.9 kcal/mole respectively. Annealing the silicon covered tip at 1000°K produces a silicon enriched surface phase with new crystal planes.
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