Abstract
The quaternary Ga0.16In0.84As0.80Sb0.20 epilayer was grown on GaSb substrate by metalorganic chemical vapour deposition (MOCVD). On the epitaxial surface smooth and perfect three-dimensional islands were observed by atomic force microscopy (AFM). A good crystalline quality was characterized by single-crystal X-ray diffraction pattern and double-crystal X-ray rocking curve. When the growth rate of the growth nucleus is larger than the growth rate of the high-index facet, the mode of island growth is isotropic.
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