Abstract
A 1-μm thick N-polar gallium nitride (GaN) thin film has been grown on 2-inch vicinal sapphire substrate (c off 2° toward m plane) by metal organic chemical vapor deposition (MOCVD). The smooth surface without any inversion domains is demonstrated by the optical microscopy, atomic force microscopy, and scanning electron microscopy. The N-polar property is confirmed by potassium hydroxide etching and the atomic layout through high-resolution transmission electron microscopy (HRTEM). The good crystalline quality is verified by X-ray rocking curves and photoluminescence.
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