Abstract
We developed a low energy ion beam deposition system for isotope-selective modification of materials. It consists of a conventional ion implanter (HVEE 500 kV) and an attachable deceleration system. 29(N 2) + ion beams were used for the nitridation of Si(0 0 1) and the resulting 15N retained doses and profiles were determined by narrow nuclear resonance profiling. 29Si was deposited on amorphous carbon films on Si(0 0 1) and the doses evaluated by channeled α particle beams with detection of scattered α at grazing angles. 29Si was also deposited on Si(0 0 1) and the resulting profiles determined by narrow nuclear resonance.
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