Abstract
The spectral dependence of isolation characteristics for quantum-well laser diode optical switches, which are the level difference between the ON and OFF state attenuation, are calculated for p- and n-type quantum-well InGaAsP/InP using a semiclassical density-matrix analysis. The results show that p-type materials, which have rather large background carrier concentration, are suitable for large gain and high isolation optical switches. Broadband laser diode optical switches with a gain region of 1.3–1.55 μm can be obtained.
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