Abstract
The isolation spectra for laser diode optical switches, which are the level difference between the on and off state attenuation, are calculated for n- and p-type GaAlAs and InGaAsP using a Gaussian fit to the Halperin–Lax band tails and Stern’s matrix element model. The measured and calculated isolation spectra for a GaAlAs laser diode are closely coincident with one another. The calculated results show that p-type materials, which contain small background carrier concentrations, are suitable for high isolation laser diode optical switches. Especially, it becomes clear that p-type In0.533Ga0.467As laser diode optical switches, whose operating wavelength is 1.65 μm, give the best isolation characteristics.
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