Abstract
In this communication, we present Ar+ implant isolation results of InGaAs/InAlAs/InP layers for high electron mobility transistor fabrication. Ar+ implantations were performed at 100 keV at room temperature with doses ranging from 5×1012 to 1015 at./cm2. A sheet resistance of about 30 MΩ was measured after 10 hours annealing at 300 °C. Using deep Auger analysis, we show that this high resistivity is due to the intermixing of InGaAs and InAlAs layers.
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