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Abstract
The development of stable room-temperature bright single-photon emitters using atomic defects in hexagonal boron nitride flakes (h-BN) provides significant promise for quantum technologies. However, an outstanding challenge in h-BN is the creation and detection of isolated, stable single-photon emitters with high emission rates and with very low Huang–Rhys (HR) factor. Here, we discuss the quantum photonic properties of a single, isolated, stable quantum emitter that emits single photons with a high emission rate and a low HR value of 0.6 ± 0.2 at room temperature. A scanning confocal image confirms the presence of a deserted, single-quantum emitter with a prominent zero-phonon line at ∼578 nm with a well-separated phonon sideband at 626 nm. The second-order intensity-intensity correlation measurement shows an anti-bunching dip of ∼0.25 with an emission lifetime of 2.46 ± 0.1 ns, reinforcing distinct features of the single-photon emitter. The importance of low-energy electron beam irradiation and subsequent annealing is emphasized to achieve stable, reproducible single-photon emitters.
Published Version
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