Abstract
A model for adsorbate islands growth is proposed to simulate pattern formation in multilayer plasma-condensate system. It was shown that morphology of surface patterns and mean island size can be effectively controlled by adsorption rate (pressure of gaseous atmosphere), interaction strength of adsorbate and external electrical field, managing anisotropic diffusion of atoms between layers. Dynamics of patterns formation is analyzed by considering statistical properties of growing surface on each formed layer and mean island size having size from third up to two diffusion lengths of adatoms. It was shown that island growth relates to modified Ostawald ripening scenario with universal island size distribution. Obtained data relates well to experimental observation of adsorbate island formation at condensation of metals and semiconductors. Described model and results are general and can be used to describe real experimental observations of surface nanopatterning at condensation in plasma-condensate devices.
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