Abstract
Although TiN and films are widely used in silicon wafer fabs, the possibility of titanium contamination adversely affecting device characteristics remains a great concern. In this study, ion implantation was used to determine the critical level of titanium which significantly reduces carrier lifetime in a silicon substrate. Possible contamination vectors (wet etch solutions and hot processes), the diffusion of titanium in silicon, and the effect of oxidation and cleaning of substrates intentionally contaminated with Ti have been investigated. With reasonable safeguards, titanium contamination is not a critical problem.
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