Abstract
This paper presents an analytical solution for the Eshelby problem of polygonal inhomogeneity in an anisotropic piezoelectric plane. By virtue of the equivalent body-force concept of eigenstrain, the induced elastic and piezoelectric fields in the corresponding inclusion are first expressed in terms of the line integral along its boundary with the integrand being the Green’s functions, which is carried out analytically. The Eshelby inhomogeneity relation for the elliptical shape is then extended to the polygonal inhomogeneity, with the final induced field involving only elementary functions with small steps of iteration. Numerical solutions are compared to the results obtained from other methods, which verified the accuracy of the proposed method. Finally, the solution is applied to a triangular and a rectangular quantum wire made of InAs within the semiconductor GaAs full-plane substrate.
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