Abstract
Starting from 1982, research in the field of electron irradiation of power semiconductor devices has been conducted in Italy on experimental basis. The use of high energy electrons for carrier lifetime control in these devices has been widely investigated. In collaboration with the three major Italian power semiconductor firms, Ansaldo, IRCI and SGS-Thomson Microeletronics, series of irradiation tests have been performed on fast diodes and thyristors, GTO thyristors, power MOS transistors and insulated gate bipolar transistors in order to achieve modelling of the electrical parameters and specific adjustment of carrier lifetime. The radiation-induced defects in silicon have been studied and characterized by the DLTS technique. The optimum conditions for radiation processing of different types of fast switching power devices with medium and high blocking capabilities have been determined. Diodes and thyristors, in all power categories, which did not have the required switching and release times after diffusion, were properly adjusted by irradiation thus saving them from rejection. The results obtained have led the above mentioned firms to use this technology for series production in place of the conventional high-temperature heavy metal diffusion for lifetime control. Equipment and methods for series production have been developed, tested and put into operation.
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