Abstract
New devices that are challenging the silicon-controlled rectifier are considered. Among them are the high-power bipolar-junction transistor (HPBT), the power MOS field-effect transistor (MOSFET), the gate turnoff (GTO) thyristor, and the insulated-gate bipolar transistor (IGBT), sometimes called a conductivity-modulated field-effect transistor (COMFET). Also important are the static-induction or short-channel junction-effect transistor, and its cousin, the static-induction thyristor. Applications for these devices are outlined, and their characteristics are briefly sketched. The use of MOSFETs in automobiles and IGBTs for motor drives is examined in more detail. Packaging issues are discussed.
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