Abstract
The present paper reports on positron lifetime measurements on atomic defects in SiC after low-temperature (80 K) electron irradiation of low (0.47 MeV) and high (2.5 MeV) electron energies and doses from 1.8×1017 to 1.9×1019 e/cm2 as well as after subsequent isochronal annealing up to 1900 K. For these studies the single crystals of nitrogen doped (2–3×1018 cm−3) SiC grown by a modified Lely technique with hexagonal structure (6H polytype) were used.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Applied Physics A Materials Science & Processing
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
