Atomic Defects in Transition Metal Carbides and SiC Studied by Positron Annihilation

Abstract

AbstractNonstoichiometric defects in carbides of the Group IV and V transition metals and radiation-induced atomic defects in SiC were studied by positron lifetime measurements before and after low-temperature (80 K) electron irradiation and subsequent thermal annealing up to 1900 K. Agglomeration of radiation-induced atomic defects which strongly depends on the energy of the irradiation electrons and subsequent decay of the agglomerates in SiC is observed.