Abstract
Al-doped ZnO (AZO) films are known as n-type transparent semiconductors. We have investigated the effects of 100MeV Xe ion irradiation on the optical and structural properties of AZO films, which were prepared on SiO2 glass at 400°C by using a RF-magnetron sputtering deposition method. We discuss relationships between these property modifications and the recent observations of the conductivity increase by ion irradiation. It is suggested that the band-gap modification has more close relation with the conductivity increase than the structural modification.
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