Abstract
We report the effects of an SiO2 interlayer on the structural and electrical properties of Al-doped ZnO (AZO) films grown on polyimide (PI) substrate. By inserting a SiO2 interlayer between the AZO film and the PI substrate, we could control the microstructure of the AZO films. The granule size of the SiO2 interlayer was determined strate temperature, and the column width in the AZO film was strongly affected by the initial granule size in the interlayer. In-situ Hall measurement of the AZO films under bending stress was performed for the first time, and flexibility-related electrical properties of the AZO films were discussed.
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