Abstract
Neodymium (Nd) and Tungsten (W) doped Aluminum Nitride (AlN) thin films deposited on Si (110) substrates are fabricated by reactive magnetron sputtering technique. The thin films are irradiated at room temperature with protons with a fluence of 1 × 1014 ions/cm2 carrying energy of 335 keV. Before and after irradiation, the films are characterized by Rutherford backscattering (RBS) spectroscopy for their stoichiometric and dimensional information while diffuse reflectance spectroscopy (DRS), Fourier transform infrared spectroscopy (FTIR), and four point probe method are utilized for their optical, spectroscopic and electrical characteristics respectively. The structural information of the films are obtained by using x-ray diffraction (XRD). The irradiation has evolved changes in the electrical, and optical properties with change in bandgap of the samples. The change in the optical properties can be best explained using Burstein Moss Effects.
Published Version
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