Abstract
Carbon–nitride thin films were deposited by pulsed laser ablation of graphite with assistance of low energy nitrogen-ion-beam irradiation. The nitrogen to carbon (N/C) atomic ratio, bonding state, microstructure, surface morphology, and electrical property of the deposited carbon–nitride films were characterized by x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, micro-Raman spectroscopy, x-ray diffraction (XRD), atomic force microscopy, and four-probe resistance. The irradiation effect of low energy nitrogen-ion beam on the synthesis of carbon–nitride films was investigated. The N/C atomic ratio of the carbon–nitride films reached the maximum at the ion energy of ∼200 eV. The energy of ∼200 eV was proposed to promote the desired sp3-hybridized carbon and the C3N4 phase. Electrical resistivity of the deposited films was also influenced by the low energy nitrogen-ion-beam irradiation. However, the low energy irradiation had little effect on the surface morphology of the films. XRD results revealed the coexistence of the α- and β-C3N4 phases in the deposited thin films.
Published Version
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