Abstract
Ordered graphene films have been fabricated on Fe-treated SiC and diamond surfaces using the catalytic conversion of sp3 to sp2 carbon. In comparison with the bare SiC (0001) surface, the graphitization temperature is reduced from over 1000°C to 600°C and for diamond (111), this new approach enables epitaxial graphene to be grown on this surface for the first time. For both substrates, a key development is the in situ monitoring of the entire fabrication process using real-time electron spectroscopy that provides the necessary precision for the production of films of controlled thickness. The quality of the graphene/graphite layers has been verified using angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and low energy electron diffraction. Graphene is only formed on treated regions of the surface and so this offers a method for fabricating and patterning graphene structures on SiC and diamond in the solid-state at industrially realistic temperatures.
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