Iron doped GaInP for selective regrowth around GaAs mesas

Abstract

The feasibility of growing Ga 0.51In 0.49P:Fe on planar and non-planar GaAs substrates by hydride vapour phase epitaxy is demonstrated. Fe doping has been achieved by the reaction between Fe solid source and HCl gas in an ambient containing nitrogen and hydrogen of ratio 9:1. Various Fe concentrations in Ga 0.51In 0.49P:Fe were obtained by changing the temperature of the Fe source, while maintaining all the other parameters constant. This relation in the form of an Arrhenius plot is compared to the case of InP:Fe. The slope of the Arrhenius plots for both the cases is 1.44 eV and is attributed to the activation energy of a step involved in the generation of FeCl 2. The resistivity of Ga 0.51In 0.49P:Fe is of the order of 1 × 10 10 Ω ·cm. A successful selective regrowth of Ga 0.51In 0.49P:Fe around the [110] and [110] directional GaAs mesas is also demonstrated.