Abstract
A pulsed-dc reactive sputtering technique was used for iridium oxide thin-film deposition. Pulsing frequency and oxygen flow were varied over several deposition cycles, regarding stimulation electrode applications. Surface and electrochemical analysis were performed for deposition evaluation. The results show the influence of the oxygen flow to the morphology and the electrochemical properties of the reactively sputtered films. Optimal surface structure and electrochemical properties for films deposited at 0.016 mbar working pressure, 100 kHz pulse frequency and 1 µs pulsewidth can be achieved at oxygen flows around 8 to 10 sccm.
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