Abstract
In this work, we report the fabrication and characterization of bolometers based on amorphous silicon germanium alloys (a-Si 1 − x Ge x :H,F). The fabrication of microbolometers with thermally isolated a-SiGe thin film as sensing layer, is described. Membrane-supported and bridge-supported detectors have been fabricated. Sensing layer is deposited by low frequency plasma enhanced chemical vapor deposition technique. Since this deposition is carried out at relative low temperature T D=573 K, the read-out IC fabricated on silicon substrate is not affected, providing compatibility with silicon IC technologies. Responsivity and detectivity were measured under illumination at different bias voltages. The thermal time constant, the thermal conductance and current noise are determined by means of the voltage–time curves. Responsivity and detectivity are observed to depend on the physical properties of the materials forming the device and on the device geometry. Obtained results of pixel resistance, thermal resistance and responsivity demonstrate a-SiGe:H,F like a material suitable for realizing high-performance microbolometers.
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