Abstract
Several a-Si1−xGex:H alloys and a-Ge:H grown by PECVD have been investigated using transient and steady state junction capacitance techniques. From transient photocapacitance and transient photocurrent measurements we estimate (μτ)h of order 10−10cm2/V and deep defect densities of order 1016cm−3 for our best a-Si1−xGex:H sample. The a-Ge:H samples investigated exhibited a large defect density (Nd℞1018cm−3) but a low Urbach parameter (Eu=50meV). We found a large role of lattice relaxation for the dominant deep defect band in a-Si1−xGex:H.
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