Abstract
Schottky contacts and ohmic contacts on n-type GaN were investigated as a function of annealing temperature and compared to their more common Ni-based counterparts. The ohmic contacts on n-type GaN with exhibited barrier heights of after annealing at and displayed less intermixing of the contact metals compared to . A minimum specific contact resistance of was obtained for the ohmic contacts on n-type GaN with after annealing at . The measurement temperature dependence of contact resistance was similar for both and , suggesting the same transport mechanism was present in both types of contacts. The Ir-based ohmic contacts displayed superior thermal aging characteristics at . Auger electron spectroscopy showed that Ir is superior to Ni as a diffusion barrier at these moderate temperatures.
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