I/P interface modification for stable and efficient perovskite solar cells

Abstract

Interface engineering has played an increasingly essential role in the development of perovskite solar cells (PSCs). Herein, we adopted an effective and simple one-step interface passivation method on a FA-based perovskite to fabricate efficient and stable planar PSCs. The surface defects are reduced by the perovskite interface passivation layer incorporated between the hole transport and perovskite absorber layers, and then non-radiative recombination is suppressed while interfacial carrier extraction is enhanced. The passivated planar PSCs demonstrates 20.83% power conversion efficiency (PCE), which is caused by the simultaneous enhancement of the fill factor and open-circuit voltage. In addition, the device also shows great ambient and thermal stability. It retains 94% of its original PCE after 1000 h under ambient air without encapsulation as well as 90% of its initial efficiency after 400 h under continuous heating at 65 °C with encapsulation. This research provides a strategy for the development of efficient and stable PSCs.