Abstract
背景与目的以表皮生长因子受体(epidermal growth factor receptor, EGFR)为靶点的分子靶向治疗在非小细胞肺癌(non-small cell lung cancer, NSCLC)的治疗中发挥重要的作用。EGFR突变的患者对EGFR酪氨酸激酶抑制剂(EGFR-tyrosine kinase inhibitor, EGFR-TKI)治疗敏感、疗效显著,但无论近期疗效如何,患者最终都不可避免地产生耐药。大量研究证实,EGFR基因的二次突变(T790M)是患者耐药的主要原因。本研究旨在探讨电离辐射对NSCLC细胞株T790M突变所致EGFR-TKI耐药的影响。方法选择NSCLC细胞株H1975和H3255为研究对象,实时荧光定量PCR法检测两株细胞的突变状态、克隆形成实验观察两株细胞的放射敏感性,MTT法检测各处理组两株细胞对EGFR-TKI的抗药性。结果H1975为T790M+L858R双突变株、H3255是仅有L858R的单突变株;各处理组H1975及H3255的存活分数未见明显差异(P=0.952),提示T790M突变对NSCLC细胞株的放射敏感性无影响;2.5 Gy X线辐射组,H1975的IC50为(0.678, 2±0.373)μmol/L,较0 Gy对照组的(3.520±0.821)μmol/L明显下降,差异有统计学意义(P=0.008),H1975相较于H3255的抗药性也从85.9倍下降为39.2倍。结论电离辐射可降低NSCLC细胞株T790M突变所致的TKI耐药,本实验的研究结果为后续的体内和临床研究提供了研究依据;EGFR-TKI治疗期间联合放射治疗对克服T790M突变介导的耐药性有望成为一种有希望的治疗策略。
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