Ionizing Doses Calculations for Low Energy Electrons in Silicon and Aluminum

Abstract

The electron transport at low and very low energy (10 eV–2 keV) is investigated with a Monte Carlo (MC) code in silicon and aluminum. The elastic scattering with nuclei is described by Mott’s model of partial waves, whereas the inelastic collisions with electrons are described by the complex dielectric function theory. Comparisons of MC simulations with electron emission yields (EEY) and energy loss spectra experimentally measured in ultrahigh vacuum on Ar-etched samples are given. The practical ranges and the ionizing dose calculations are presented down to 10 eV for electrons in silicon and aluminum. The simulation results show a correlation between the EEY and the ionizing doses. At low energy, while the electrons stay in the first ~10 nm from the surface due to the elastic scattering, the EEY increases and the ratio of the ionizing dose over the incident energy decreases. Above 200 eV, when the electrons go deeper into the solid due to the inelastic scattering, the EEY decreases and the ionizing dose ratio increases.