Abstract
CdTe films and CdTe/PbTe multilayered structures have been grown on Si(111) and InSb(111) substrates by ionized-cluster beam (ICB) epitaxy. The crystal properties of CdTe films are studied, and it was found that they are of good crystallinity and effective as a buffer layer for CdTe/PbTe multilayered structures. The formation of the multilayered structures was confirmed by Rutherford backscattering measurements. Also, optical absorption measurements and the theoretical calculations revealed the existence of an n = 1 miniband in the potential well of the structure. The ICB technique has several unique features for film formation, and it was found to have a high potential for preparing functional thin films and devices.
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