Abstract
A review of the newly developed ion sources for implantation application is presented. These ion sources include Bernas ion source and electron cyclotron resonance (ECR) ion source. They have advantages of source lifetimes and yields of multiply charged ion-beam current. Typical lifetime of Bernas source is 100 h and the ratio of As2+/As+ is about 25% with wide range beam current controllability. Lifetime of the ECR source is more than 150 h and the ratio of As2+/As+ beams is about 50%. The characteristics of these ion sources for the ion implantation system are also presented on actual uses in factories.
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