Abstract

The effect of ion implantation, including Ar+ ion with influences (1 × 1013 - 1015 ions/cm2), on the electrical and optical properties of ultrahigh molecular weight polyethylene (UHMWPE) were investigated with particular emphasis placed on the sensor performance to be used in the field of radiation detection. The obtained results focusing on the effect of the different influences showed a significant change in the electrical conductivity, capacitance and loss tangent. The absorption spectra for UHMWPE samples were recorded and the values of the allowed direct and indirect optical energy gap (Eopt)d, (Eopt)in of UHMWPE and energies of the localized states for the virgin and implanted samples were calculated. We found that the optical energy gap values decreased as the radiation dose increased. The results can be explained on the basis of the ion beam radiation-induced damage in the linear chains of UHMWPE, with cross-linking generated after implantation. The observed changes in both the optical and the electrical properties suggest that the UHMWPE film may be considered as an effective material to achieve ion-radiation detection at room temperature.

Highlights

  • Ion implantation is a technology in which one type of external action leads to various defects in materials

  • The effect of ion implantation, including Ar+ ion with influences (1 × 1013 1015 ions/cm2), on the electrical and optical properties of ultrahigh molecular weight polyethylene (UHMWPE) were investigated with particular emphasis placed on the sensor performance to be used in the field of radiation detection

  • The study of the optical absorption and the absorption band edge is a useful tool for providing information about the electronic band structure, localized states, type of optical transition and optical energy gap in polymeric materials [22]

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Summary

Introduction

Ion implantation is a technology in which one type of external action leads to various defects in materials. Abdul-Kader et al [11] studied the changes in the surface layer composition produced by different ion bombardment of polyethylene and isotactic polypropylene They have observed important hydrogen release with increasing ion dose and they have correlated it with linear energy transfer (LET). The large doses of irradiation caused by the presence of oxygen and UV irradiation were found to influence the response and sensitivity of detectors [5] [20], but the data available for ultrahigh molecular weight polyethylene and the effect of ion radiation on the physical properties are not sufficient. In the present work, the author reports the effects of 160 keV Ar ion irradiation on both the electrical and optical properties of UHMWPE structures at different influences. By gaining sufficient knowledge about the ion radiation, the induced effect indicates that this is suitable for use as sensitive ion beam dosimeters

Sample Preparation
Optical Measurements
Dielectric Measurements
Optical Properties for UHMWPE
Electrical Frequency Response for UHMWPE
Conclusion
Full Text
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