Ion-induced transformations of a W–Si interface

Abstract

Tungsten silicide formation in multilayer tungsten/silicon structure was investigated. The W–Si multilayers were deposited on thermally oxidized silicon wafers using the dual-target magnetron sputtering. Deposition of the whole stack of sublayers was carried out without breaking vacuum in order to eliminate contamination or oxidation of the interfaces between sublayers. Samples were annealed in the RTA furnace at temperatures ranging from 700 °C up to 1050 °C. Some of the structures were irradiated with argon ion beam before annealing. Reactions between sublayers were studied using SEM imaging of cross-sectional cleavages and by X-ray diffraction analysis. Influence of the irradiation with argon ion beam on structural transformations was investigated using RBS analysis. It has been found that tungsten silicide formation depends on the deposition sequence. The reaction was more effective on interfaces between silicon layer deposited on tungsten then on interface between tungsten deposited on silicon. Ion beam mixing experiment showed that ion–target interaction promotes formation of the WSi 2 phase.