Abstract
Abstract Vanadium single crystals have been low dose implanted with Ga-, Se-, Bi- and In-ions. Lattice positions have been determined with the channeling and backscattering technique. For Ga-, Bi-and In-atoms 100% substitutionality was observed. The Se-atoms were found to be slightly displaced from the substitutional lattice site. Furnace and pulsed electron beam annealing of the Se-implanted V-single crystals with energy densities insufficient for surface melting caused a further decrease of the substitutional fraction.
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